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VOLUME 19 (1974) | ISSUE 7 | PAGE 478
Anomalously high scattering of electrons in plastically deformed n-silicon
The change of the electron mobility μη(Τ) in я-type silicon with density η =(3-4)Xl015 cm-3 was investigated as a function of the density of the dislocations introduced by uniaxial compression at 600°C. A sharp decrease of μ„(Γ) was observed in samples with dislocation density Ndis>2Xl08 cm-2. The change of the scattering action of the dislocation following aging and annealing of the samples confirms the important role played by the state of the atmosphere of deep centers at the dislocations.