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VOLUME 19 (1974) | ISSUE 8 | PAGE 513
Injection light-emitting diodes based on low-resistance ZnS with blue and green emission
In metal-semiconductor diodes based on low-resistance ZnS single crystals, we observed at room temperature a sufficiently intense and stable blue and green electroluminescence, registered when a positive bias U > 2 V was applied to the diodes and apparently due to injection of holes into the ZnS from the metallic contact. In the dc interval 10~5-10~1 A, the external quantum yield of the luminescence was 10~4 quantum/electron when Au was used as the injecting contact.