Mechanism of radiative recombination in strongly doped p-GaAs
Zverev L.P., Kruzhaev V.V., Negashev S.A.
We investigated the behavior of the photoluminescence (PL) spectra of strongly doped p-GaAs in a magnetic field, and analyzed the polarization of the recombination radiation in the Faraday configuration. The observed effects offer evidence in favor of the interband recombination mechanism.