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VOLUME 20 (1974) | ISSUE 2 | PAGE 119
Measurement of the intraband relaxation time of electrons in a semiconductor
We estimate the electron relaxation times T, and Γ2 (energy and quasimomentum relaxation times) in the semiconducting single crystal CdSojsSe^s (Г = 130°К) near the bottom of the conduction band {ϋω-Eg = 5 meV), using the effect of self-induced transparency in single-photon excitation by ultrashort pulses of the second harmonic (/Τω = 2.34 eV, τ * 5 Χ 10~12 sec) of a mode-locked neodymium laser.