Possibility of focusing and self-focusing of light beams in a semiconductor by varying the electron component of its dielectric constant
Maev R.G., Pado G.S., Poluektov I.A., Pustovoit V.I.
We consider theoretically new mechanisms of focusing and self-focusing in semiconductors under conditions of temperature quenching of the conductivity. The effects considered can be used in a number of problems of optoelectronics, such as for a rapid spatial displacement of light beams, for variable focusing, and for other purposes.