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VOLUME 20 (1974) | ISSUE 5 | PAGE 297
Inverted population and stimulated superradiance in breakdown switching
We report observation of stimulated emission produced following high-voltage switching of symmetrical In—GaAs(Cu)—In structures into the low-resistance state. The primary act in switching in such structures is generation of electron-hole pairs via impact ionization. The subsequent modulation of the high-resistance base via the τρ mechanism within a time 10~8 sec makes it possible to realize conditions of rapid removal of the field from the base. Consequently, the conditions needed for population inversion are satisfied if the density of the current flowing through the structure is high enough.