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VOLUME 20 (1974) | ISSUE 5 | PAGE 304
Oriented crystallization of thin films that are obtained with the aid of a laser
We present data on the deposition of thin films of bismuth telluride with the aid of a Q-switched laser. The energy flux density on the target surface was ~109 W/cm2. The temperature of the NaCl and mica substrates was varied between 20 and 350 °C. We demonstrate the possibility of controlling the degree of structural perfection of the evaporated films even at a condensation rate ~1010 A/sec. Films with the structure of a mosaic single crystal have been obtained.