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VOLUME 23 (1976) | ISSUE 11 | PAGE 651
Recombination radiation on dislocations in silicon
Recombination radiation connected with dislocations in silicon has been observed for the first time. At Τ = 4.2°K, the dislocation radiation corresponds to a series of lines with energies 0.812, 8.875, 0.934, and 1.000 eV at the maxima.