Investigation of high-frequency conductivity of dislocations in silicon
Grazhulis V.A., Kveder V.V., Mukhina V.Yu., Osip'yan Yu.A.
An investigation of p-type silicon crystals (1013 boron atoms/cm3) containing dislocations, in the temperature interval Τ < 150°K, has revealed a sharp increase of the high-frequency conductivity σ(ω) of the crystals at the frequencies / = 9.5 Χ109 and /= 3.3 Χ1010 Hz compared with the dc conductivity σ(0), with a ratio ο-(ω)/ο-(0)> 107. The conductivity σ(ω) depends little on the temperature and increases with increasing frequency, whereas o-(0) depends exponentially on the temperature with an activation energy E0 = 0.44 eV. It is concluded in the paper that the anomalously large high-frequency conductivity of deformed crystals is due to conductivity along dislocations.