Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 41-62
   Volumes 1-20
   Volumes 21-40
      Volume 40
      Volume 39
      Volume 38
      Volume 37
      Volume 36
      Volume 35
      Volume 34
      Volume 33
      Volume 32
      Volume 31
      Volume 30
      Volume 29
      Volume 28
      Volume 27
      Volume 26
      Volume 25
      Volume 24
      Volume 23
      Volume 22
      Volume 21
Search
VOLUME 24 (1976) | ISSUE 7 | PAGE 401
Influence of the depth of location of donor levels on the degree of optical orientation of 29Si nuclei in silicon
We investigated the optical orientation of the nuclear moments of 29Si in silicon containing phosphorus and doped with gadolinium, which shifts the donor levels of the phosphorus into the interior of the forbidden band. It is shown that by increasing the depth of the donor levels it is possible to obtain very large degrees of optical polarization of the nuclei.