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VOLUME 24 (1976) | ISSUE 7 | PAGE 401
Influence of the depth of location of donor levels on the degree of optical orientation of 29Si nuclei in silicon
We investigated the optical orientation of the nuclear moments of 29Si in silicon containing phosphorus and doped with gadolinium, which shifts the donor levels of the phosphorus into the interior of the forbidden band. It is shown that by increasing the depth of the donor levels it is possible to obtain very large degrees of optical polarization of the nuclei.