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VOLUME 38 (1983) | ISSUE 6 | PAGE 278
New explanation of recombination-stimulated phenomena in semiconductors
It is shown that recombination-stimulated diffusion, breakdown of clusters, and other processes in semiconductors, which were previously associated with energy transfer by nonradiative recombination to a center, can be explained by the excitation of an electron (or hole) in the center into an antibinding orbital. Experiments on identification of the proposed mechanism are examined.