Formation of highly crystalline C60 molecular films on Bi(0001)/Si(111) surface
A. I. Oreshkin, R. Z. Bakhtizin+, J. T. Sadowski*, Y. Fujikawa*, T. Sakurai*
Moscow State University, Department of Physics, 119992 Moscow, Russia
+Department of Physical Electronics, Bashkir State University, 450074 Ufa, Russia
*Institute for Materials Research, Tohoku University, 980-8577 Sendai, Japan
PACS: 68.37.Ef, 68.47.Fg
Abstract
We report the results of
scanning tunneling microscopy (STM) investigation of a
controllable growth of C60 adsorption on the
Bi(0001)/Si(111) surface. Using UHV STM it has been shown that
the most favorable sites for initial stage of C60 adsorption
are the double steps and domain boundaries. At monolayer
of C60 coverage the modulation pattern caused by epitaxial
relation between C60 and Bi unit cells has been observed.
Increasing of C60 coverage up to several monolayers results
in the formation of highly crystalline molecular film.