Home
For authors
Submission status

Current
Archive (English)
Archive
   Volumes 61-80
   Volumes 41-60
   Volumes 21-40
   Volumes 1-20
   Volumes 81-92
      Volume 92
      Volume 91
      Volume 90
      Volume 89
      Volume 88
      Volume 87
      Volume 86
      Volume 85
      Volume 84
      Volume 83
      Volume 82
      Volume 81
Search
VOLUME 88 (2008) | ISSUE 11 | PAGE 867
Hyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition
Abstract
We investigate the insulating phase that forms in a titanium nitride film in a close vicinity of the disorder-driven superconductor-insulator transition. In zero magnetic field the temperature dependence of the resistance reveals a sequence of distinct regimes upon decreasing temperature crossing over from logarithmic to activated behavior with the variable-range hopping squeezing in between. In perpendicular magnetic fields below 2 T, the thermally activated regime retains at intermediate temperatures, whereas at ultralow temperatures, the resistance increases faster than that of the thermally activated type. This indicates a change of the mechanism of the conductivity. We find that at higher magnetic fields the thermally activated behavior disappears and the magnetoresistive isotherms saturate towards the value close to quantum resistance h/e2.