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VOLUME 90 (2009) | ISSUE 5 | PAGE 389
Calculation of the anisotropic mobility in (110) AlAs quantum wells at zero temperature
PACS: 73.21.Fg, 73.50.-h, 73.61.Ey
Abstract
We calculate the mobility of the two-dimensional electron gas as realized in (110) AlAs quantum wells at zero temperature. In this structure the mass is strongly anisotropic which gives rise to an anisotropic mobility. By using a theoretical approach developed by Tokura [Phys. Rev. B 58, 7151 (1998)] we numerically calculate the anisotropic mobility. We study impurity scattering in quantum wells having an ellipsoidal Fermi surface. We find that increasing the electron density and/or the well width results in reduction of the anisotropy of the mobility while the anisotropy in the scattering time is increased. A strong dependence of the mobility anisotropy on the impurity position is predicted. Excellent agreement with a recently published experimental result is found under the assumption that impurities are located at the edge of the quantum well.