For authors
Submission status

Archive (English)
   Volumes 113-119
   Volumes 93-112
      Volume 112
      Volume 111
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
VOLUME 93 (2011) | ISSUE 8 | PAGE 499
Single-particle relaxation time of the two-dimensional electron gas in Si/SiGe: many-body effects
The single-particle relaxation time of the two-dimensional electron gas in SiGe/Si/SiGe quantum wells is calculated. Many-body effects beyond the random-phase approximation become important at low electron density. For charged impurity scattering (remote doped) we analyze the importance of these many-body effects as function of the electron density and the spacer width. Induced by many-body effects a strong reduction of the single-particle relaxation time at low electron density is predicted. We describe the relation with the transport scattering time, we comment on multiple-scattering effects and we discuss the determination of many-body effects in existing samples.