Home
For authors
Submission status

Archive
Archive (English)
Current
   Volumes 113-120
   Volumes 93-112
      Volume 112
      Volume 111
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 93 (2011) | ISSUE 10 | PAGE 665
Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation
Abstract
Femtosecond laser treatments (second harmonic of Ti-sapphire laser, \lambda\approx400 nm wavelength, < 30 fs pulse duration) were applied for crystallization of thin hydrogenated amorphous silicon films on glass substrates. The concentration of atomic hydrogen in the films was varied from 10 to {\approx} 35\%. The energy densities (laser fluences) for crystallization of the films with thicknesses from 20 to 130 nm were found. Assumedly, non-thermal processes (plasma annealing) take place in phase transition caused ultra-fast pulses. The developed approach can be used for creation of polycrystalline silicon films on non-refractory substrates.