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| VOLUME 93 (2011) | ISSUE 10 | PAGE 665 |
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Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation
V. A. Volodin, A. S. Kachko+, A. G. Cherkov+, A. V. Latyshev+*, J. Koch∇, B. N. Chichkov∇
+A.V. Rzhanov Institute of Semiconductor Physics RAS, 630090 Novosibirsk, Russia *Novosibirsk State University, 630090 Novosibirsk, Russia ∇Laser Zentrum Hannover, 30419 Hannover, Germany
Abstract
Femtosecond laser treatments (second harmonic of Ti-sapphire laser,  nm
wavelength, < 30 fs pulse duration) were applied for crystallization
of thin hydrogenated amorphous silicon films on glass substrates. The
concentration of atomic hydrogen in the films was varied from 10 to
 . The energy densities (laser fluences) for crystallization
of the films with thicknesses from 20 to 130 nm were found. Assumedly,
non-thermal processes (plasma annealing) take place in phase transition
caused ultra-fast pulses. The developed approach can be used for creation of
polycrystalline silicon films on non-refractory substrates.
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