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VOLUME 95 (2012) | ISSUE 8 | PAGE 472
Anomalous temperature dependence of photoluminescence in GeOx films and GeOx/SiO2 nano-heterostructures
Abstract
The optical properties of GeOx film and GeOx/SiO2 multilayer heterostructures (with thickness of GeOx layers down to 1 nm) were studied with the use of Raman scattering and IR spectroscopy, ellipsometry and photoluminescence spectroscopy including temperature dependence of photoluminescence. The observed photoluminescence is related to defect (dangling bonds) in GeOx and interface defects for the case of GeOx/SiO2 multilayer heterostructures. From analysis of temperature dependence of PL intensity, it was found that rate of nonradiative transitions in GeOx film has Berthelot type, but anomalous deviations from Berthelot type temperature dependence were observed in temperature dependences of PL intensities for GeOx/SiO2 multilayer heterostructures.