Home
For authors
Submission status

Archive
Archive (English)
Current
   Volumes 113-120
   Volumes 93-112
      Volume 112
      Volume 111
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 96 (2012) | ISSUE 7 | PAGE 484
Giant Rashba-type spin splitting at polar surfaces of BiTeI
Abstract
On the basis of relativistic ab-initio calculations, we show that both Te- and I-terminated surfaces of the polar layered semiconductor BiTeI hold surface states with a giant Rashba-type spin splitting. The Te-terminated surface state has nearly isotropic free-electron-like dispersion with a positive effective mass, which along with the giant spin splitting makes BiTeI fulfilling the requirements demanded by many semiconductor-spintronics applications. The I-terminated surface state with its negative effective-mass dispersion reproduces nicely the situation with the Rashba-split surface state on surfaces of noble-metal based surface alloys. The crucial advantage of BiTeI as compared with the surface alloys is the location of the I-terminated surface state in a quite wide band gap.