Ab initio search of novel bipolar magnetic semiconductors: layered YZnAsO doped with Fe and Mn
V. V. Bannikov, A. L. Ivanovskii
Institute of Solid State Chemistry of the UB of the RAS, 620990 Ekaterinburg, Russia
Abstract
Very recently, the newest class of spintronic materials, where
reversible spin polarization can be controlled by applying gate voltage:
so-called bipolar magnetic semiconductors (BMSs, X. Li et al.,
arXiv:1208.1355) was proposed. In this Letter, a novel way to creation of
BMSs by doping of non-magnetic semiconducting 1111 phases with magnetic
dn<10 atoms is discussed using ab initio calculations of layered YZnAsO
doped with Fe and Mn. In addition, more complex materials with several
spectral intervals with opposite 100% spin polarization where multiple
gate-controlled spin-polarization can be expected, are proposed.