Home
For authors
Submission status

Archive
Archive (English)
Current
   Volumes 113-119
   Volumes 93-112
      Volume 112
      Volume 111
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 97 (2013) | ISSUE 7 | PAGE 458
Ab initio study of surface electronic structure of phosphorus donor imputiry on Ge(111)-(2×1) surface
DOI: 10.7868/S0370274X13070047
Abstract
We present the results of numerical modeling of Ge(111)-(2×1) surface electronic properties in vicinity of P donor impurity atom near the surface. We show, that despite of well established bulk donor impurity energy level position at the very bottom of conduction band, surface donor impurity might produce energy level below Fermi energy, depending on impurity atom local environment. It was demonstrated, that impurity, located in subsurface atomic layers, is visible in STM experiment. The quasi-1D character of impurity image, observed in STM experiments, is confirmed by our computer simulations.