Engineering near-surface electron states in three-dimensional topological insulators
V. N. Men'shov+*, V. V. Tugushev+*×, E. V. Chulkov*°
+National Research Centre "Kurchatov Institute", 123182 Moscow, Russia
*Tomsk State University, 634050 Tomsk, Russia
×Prokhorov General Physics Institute of the RAS, 119991 Moscow, Russia
°Departamento de Fisica de Materiales, Facultad de Ciencias Quimicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC, Centro Mixto CSIC-UPV/EHU, 20080 San Sebastian, Basque Country, Spain
Abstract
Using the continual model of a semi-infinite three dimensional (3D) topological insulator (TI)
we study the effect of the surface potential (SP) on the formation of helical topological states near the
surface. The results reveal that spatial profile and spectrum of these states strongly depend on the SP type
and strength. We pay special attention to the 3D TI substrate/non-magnetic insulating overlayer system to
illustrate the principles of the topological near-surface states engineering.