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VOLUME 99 (2014) | ISSUE 1 | PAGE 40
Nuclear spin relaxation mediated by Fermi-edge electrons in n-type GaAs
DOI: 10.7868/S0370274X14010081
Abstract
A method based on the optical orientation technique was developed to measure the nuclear-spin lattice relaxation time T1 in semiconductors. It was applied to bulk n-type GaAs, where T1 was measured after switching off the optical excitation in magnetic fields from 400 to 1200 G at low (< 30 K) temperatures. The spin-lattice relaxation of nuclei in the studied sample with nD = 9 • 1016 cm-3 was found to be determined by hyperfine scattering of itinerant electrons (Korringa mechanism) which predicts invariability of T1 with the change of magnetic field and linear dependence of the relaxation rate on temperature. This result extends the experimentally verified applicability of the Korringa relaxation law in degenerate semiconductors, previously studied in strong magnetic fields (several Tesla), to the moderate field range.