Home
For authors
Submission status

Archive
Archive (English)
Current
   Volumes 113-120
   Volumes 93-112
      Volume 112
      Volume 111
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 99 (2014) | ISSUE 8 | PAGE 537
The switching of GaAs(001) termination by action of molecular iodine
Abstract
This paper presents experimental results of an ultrahigh vacuum study of 4×2/c(8×2){\longrightarrow}2×4/c(2×8) structural transition on GaAs(001) caused by the thermal removal of the saturated iodine monolayer formed at GaAs(001)-4×2/c(8×2). It has been found out that the original c(8×2) low energy electron diffraction pattern transforms into 4×1 at 0.6 ML of iodine coverage and then keeps up to its saturation at 1.0 ML. We have determined that GaI is the only chemical product of the iodine action, its double peak was observed in the thermal desorption spectra at T = 150{\div}370 ^{\circ}C. The explanation of surface processes underlying 4×2/c(8×2){\longrightarrow}2×4/c(2×8) phase transition is presented below.