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| VOLUME 100 (2014) | ISSUE 1 | PAGE 34 |
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Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at helium temperatures
A. A. Zhukov+, Ch. Volk*×, A. Winden*×, H. Hardtdegen*×, Th. Schäpers*×°
Institute of Solid State Physics of the RAS, 142432 Chernogolovka, Russia *Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany ×JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany °II. Physikalisches Institut, RWTH Aachen University, 52056 Aachen, Germany
Abstract
In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling barrier and undivided wire is also addressed. Special attention is devoted to recently observed quasi-periodic standing waves. |