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VOLUME 100 (2014) | ISSUE 2 | PAGE 123
The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells
Abstract
The effective mass m* of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, ns, the effective mass has been found to grow with decreasing ns, obeying the relation m*/mb=ns/(ns-nc), where mb is the electron band mass and n_c\approx 0.54\cdot 10^{11} cm-2. In samples with maximum mobilities ranging between 90 and 220 m2/Vs, the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples.