Home
For authors
Submission status

Archive
Archive (English)
Current
   Volumes 113-120
   Volumes 93-112
      Volume 112
      Volume 111
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 100 (2014) | ISSUE 6 | PAGE 429
Large and tunable negative refractive index via electromagnetically induced chirality in a semiconductor quantum well nanostructure
Abstract
Large and tunable negative refractive index (NRI) via electromagnetically induced chirality is demonstrated in a semiconductor quantum wells (SQWs) nanostructure by using the reported experimental parameters in J.F. Dynes et al., Phys. Rev. Lett. 94 157403 (2005). It is found: the large and controllable NRI with alterable frequency regions is obtained when the coupling laser field and the relative phase are modulated, which will increase the flexibility and possibility of implementing NRI in the SQWs nanostructure. The scheme rooted in the experimental results may lead a new avenue to NRI material in solid-state nanostructure.