Intervalley scattering by charged impurities in graphene
L. S. Braginsky, M. V. Entin
Institute of Semiconductor Physics SB of the RAS, 630090 Novosibirsk, Russia
Novosibirsk State University, 630090 Novosibirsk, Russia
Abstract
Intervalley charged-impurity scattering processes are examined.
It is found
that the scattering probability is enhanced due to the Coulomb interaction
with the impurity by the Sommerfield factor
,
where ε is the electron energy and g is the
dimensionless constant of the Coulomb interaction.