Home
For authors
Submission status

Archive
Archive (English)
Current
   Volumes 113-121
   Volumes 93-112
      Volume 112
      Volume 111
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 101 (2015) | ISSUE 7 | PAGE 512
Anomalous Hall effect in MnSi: intrinsic to extrinsic crossover
DOI: 10.7868/S0370274X15070085
Abstract
Temperature dependences of low field Hall resistivity ρH are used to separate anomalous (ρHa) and normal (RHB) contributions to Hall effect in chiral magnet MnSi (T_{c}\approx29.1 K). It is found that the transition between paramagnetic (T>Tc) and magnetically ordered (T<Tc) phases is accompanied by the change in anomalous Hall resistivity from low temperature behavior governed by Berry phase effects (ρHa=μ0S2ρ2M, T<Tc) to high temperature regime dominated by skew scattering (ρHa=μ0S1ρ M, T>Tc). The crossover between the intrinsic ({\sim} \rho^2) and extrinsic ({\sim} \rho) contributions to anomalous Hall effect develops together with the noticeable increase of the charge carriers' concentration estimated from the normal Hall coefficient (from n/nMn(T>T_c)\approx0.94 to n/nMn(T<T_c)\approx1.5, n_{\text{Mn}}\approx4.2\cdot10^{22} cm-3). The observed features may correspond to the dramatic change in Fermi surface topology induced by the onset of long range magnetic order in MnSi.