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VOLUME 101 (2015) | ISSUE 7 | PAGE 512
Anomalous Hall effect in MnSi: intrinsic to extrinsic crossover
DOI: 10.7868/S0370274X15070085
Abstract
Temperature dependences of low field Hall resistivity ρH are used to separate anomalous (ρHa) and normal (RHB) contributions to Hall effect in chiral magnet MnSi (T_{c}\approx29.1 K). It is found that the transition between paramagnetic (T>Tc) and magnetically ordered (T<Tc) phases is accompanied by the change in anomalous Hall resistivity from low temperature behavior governed by Berry phase effects (ρHa=μ0S2ρ2M, T<Tc) to high temperature regime dominated by skew scattering (ρHa=μ0S1ρ M, T>Tc). The crossover between the intrinsic ({\sim} \rho^2) and extrinsic ({\sim} \rho) contributions to anomalous Hall effect develops together with the noticeable increase of the charge carriers' concentration estimated from the normal Hall coefficient (from n/nMn(T>T_c)\approx0.94 to n/nMn(T<T_c)\approx1.5, n_{\text{Mn}}\approx4.2\cdot10^{22} cm-3). The observed features may correspond to the dramatic change in Fermi surface topology induced by the onset of long range magnetic order in MnSi.