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| VOLUME 101 (2015) | ISSUE 9 | PAGE 703 |
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Correlations of mutual positions of charge density waves nodes in side-by-side placed InAs wires measured with scanning gate microscopy
A. A. Zhukov, Ch. Volk+*, A. Winden+*, H. Hardtdegen+*, Th. Schäpers+*×
Institute of Solid State Physics of the RAS, 142432 Chernogolovka, Russia +Grünberg Institut (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany *JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany ×II. Physikalisches Institut, RWTH Aachen University, 52056 Aachen, Germany
Abstract
We investigate the correlations of mutual positions of charge density waves nodes in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy scans demonstrate mutual correlation of positions of charge density waves nodes of two wires. A general mutual shift of the nodes positions and "crystal lattice mismatch" defect were observed. These observations demonstrate the crucial role of Coulomb interaction in formation of charge density waves in InAs nanowires. |