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VOLUME 102 | ISSUE 2 | PAGE 120
Unusual narrowing of the ESR line width in ordered structures with linear chains of Ge/Si quantum dots
Electron states in ordered Ge/Si heterostructures with linear chains of quantum dots (QDs) were studied by the electron spin resonance (ESR) method. A new ESR signal with principal g-factor values g_{zz}=1.9993\pm0.0001, g_{xx}=g_{yy}=1.9990\pm0.0001 was detected. Unlike non-ordered QD structures, where ESR line broadening is usually observed (evidence of Dyakonov-Perel mechanism efficiency), the structures under study demonstrate the narrowing of ESR line when the external magnetic field deviates from the growth direction. The ESR line width is Δ H=1.2 Oe for perpendicular magnetic field (along the growth direction) and Δ H=0.8  Oe for in-plane magnetic field. The narrowing of ESR line can be explained by combination of two mechanisms. The first one is suppression of Dyakonov-Perel spin relaxation due to a settled direction of electron motion and finiteness of QD chains. The second one is cancelation of the wave function shrinking effect with decreasing the perpendicular component of the magnetic field.