Home
For authors
Submission status

Archive
Archive (English)
Current
   Volumes 113-120
   Volumes 93-112
      Volume 112
      Volume 111
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 102 (2015) | ISSUE 2 | PAGE 120
Unusual narrowing of the ESR line width in ordered structures with linear chains of Ge/Si quantum dots
Abstract
Electron states in ordered Ge/Si heterostructures with linear chains of quantum dots (QDs) were studied by the electron spin resonance (ESR) method. A new ESR signal with principal g-factor values g_{zz}=1.9993\pm0.0001, g_{xx}=g_{yy}=1.9990\pm0.0001 was detected. Unlike non-ordered QD structures, where ESR line broadening is usually observed (evidence of Dyakonov-Perel mechanism efficiency), the structures under study demonstrate the narrowing of ESR line when the external magnetic field deviates from the growth direction. The ESR line width is Δ H=1.2 Oe for perpendicular magnetic field (along the growth direction) and Δ H=0.8  Oe for in-plane magnetic field. The narrowing of ESR line can be explained by combination of two mechanisms. The first one is suppression of Dyakonov-Perel spin relaxation due to a settled direction of electron motion and finiteness of QD chains. The second one is cancelation of the wave function shrinking effect with decreasing the perpendicular component of the magnetic field.