The effect of Coulomb correlations on the two-level quantum dot susceptibility and polarization
N. S. Maslova+, V. N. Mantsevich+, P. I. Arseyev*
+ Department of Physics, Lomonosov MSU, 119991 Moscow, Russia
*Lebedev Physical Institute of the RAS, 119991 Moscow, Russia
Abstract
We revealed that susceptibility and polarization of
two-level quantum dot (QD) with Coulomb correlations between
localized electrons weakly connected to the reservoirs are not
determined only by the stationary electron filling numbers
difference. We demonstrated that susceptibility and polarization
also depend on high-order correlation functions of electrons
localized in the QD. We found that susceptibility and polarization
can be controlled by applied bias voltage value, Coulomb
correlations strength and Rabi frequency. We demonstrated that
susceptibility and polarization amplitudes can significantly
increase and even change the sign due to the tuning of the QD
parameters. Careful analysis of correlated QD susceptibility,
polarization and electron filling numbers (occupancies) difference
in a wide range of applied bias voltage, Rabi frequency and Coulomb
correlations value was performed in terms of pseudo-operators with
constraint.