Edge excitons in a 2D topological insulator in the magnetic field
M. V. Entin+*, L. I. Magarill+*, M. M. Mahmoodian+*
+Institute of Semiconductor Physics SB of the RAS, 630090 Novosibirsk, Russia
*Novosibirsk State University, 630090 Novosibirsk, Russia
Abstract
Exciton edge states and the microwave edge exciton absorption of a 2D
topological insulator subject to the in-plane magnetic field are studied. The
magnetic field forms a narrow gap in electron edge states that allows the
existence of edge exciton. The exciton binding energy is found to be much
smaller than the energy of a 1D Coulomb state. Phototransitions exist on the
exciton states with even numbers, while odd exciton states are dark.