Effect of edge vacancies on localized states in semi-infinite zigzag graphene sheet
A. A. Glebov+*, V. L. Katkov +, V. A. Osipov+
+Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research, 141980 Dubna, Russia
*Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia
The effect of vacancies on the robustness of zero- energy edge
electronic states in zigzag- type graphene layer is studied at different
concentrations and distributions of defects. All calculations are performed
by using the Green's function method and the tight- binding approximation.
It is found that the arrangement of defects plays a crucial role in the
destruction of the edge states. We have specified a critical distance between
edge vacancies when their mutual influence becomes significant and affects
markedly the density of electronic states at graphene edge.