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VOLUME 107 (2018) | ISSUE 5 | PAGE 338
Classical effects in the weak-field magnetoresistance of InGaAs/InAlAs quantum wells
DOI: 10.7868/S0370274X18050119
Abstract
We observe an unusual behavior of the low-temperature magnetoresistance of the high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wells in weak perpendicular magnetic fields. The observed magnetoresistance is qualitatively similar to that expected for the weak localization and anti-localization but its quantity exceeds significantly the scale of the quantum corrections. The calculations show that the obtained data can be explained by the classical effects in electron motion along the open orbits in a quasiperiodic potential relief manifested by the presence of ridges on the quantum well surface.