Home
For authors
Submission status

Archive
Archive (English)
Current
   Volumes 113-119
   Volumes 93-112
      Volume 112
      Volume 111
      Volume 110
      Volume 109
      Volume 108
      Volume 107
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 108 (2018) | ISSUE 1 | PAGE 24
Effect of magnetic field on the nano-hardness of monocrystalline silicon and its mechanism
DOI: 10.1134/S0370274X18130052
Abstract
The purpose of this work is to investigate the effect of magnetic field on the nano-hardness of monocrystalline silicon doped with phosphorous by ion implantation. It is found that a magnetic field of certain parameters can increase the nano-hardness of monocrystalline silicon doped with phosphorous by ion implantation, and this increase can be eliminated by annealing monocrystalline silicon doped with phosphorous by ion implantation at 800 °C for 780 s. For the monocrystalline silicon doped with phosphorous by ion implantations that have not been exposed to a magnetic field, annealing them at 800 ° for 780 s cannot affect their nano-hardness, but exposing them to the magnetic field mentioned previously can no longer affect their nano-hardness after annealing. The mechanism of all these phenomena is discussed, a possible mechanism that a magnetic field can promote the disbanding of vacancy clusters, and a possible mechanism of magnetically stimulated clusters' disbanding and magnetoplastic effect are put forward.