Vapor-phase synthesis and magnetoresistance of (Cd1-xZnx)3As2 (x=0.007) single crystals
A. V. Kochuraa, L. N. Oveshnikovb,c, A. P. Kuzmenkoa, A. B. Davydovc, S. Yu. Gavrilkinc, V. S. Zakhvalinskiid, V. A. Kulbachinskiib,e,f, N. A. Khokhlova, B. A. Aronzonb,c
aSouthwest State University, 305040 Kursk, Russia
bNational Research Center "Kurchatov Institute", 123182 Moscow, Russia
cP.N. Lebedev Physical Institute, 119991 Moscow, Russia
dBelgorod National Research University, 308015 Belgorod, Russia
eLomonosov Moscow State University, 119991 Moscow, Russia
fMoscow Institute of Physics and Technology (State University), 141700 Dolgoprudny, Russia
Abstract
We report a highly anisotropic magnetoresistance of
(Cd0.993Zn0.007)3As2 single crystals, which were
synthesized by the vapor-phase growth. Scanning electron microscopy and
electron diffraction data confirm the high crystalline quality of
obtained samples. Studied samples exhibit specific features such as
octahedral nuclei growth and step-like morphology of the surface formed
by {112} planes. The giant anisotropic magnetoresistance and
Shubnikov-de Haas oscillations were observed at low temperatures. The results
suggest the existence of the Dirac semimetal phase in
(Cd1-xZnx)3As2 solid solution with low zinc content. Thus, the
observed magnetoresistance anisotropy is partially attributed to the
chiral anomaly.