Dimension effects in insulating NbTiN disordered films and asymptotic freedom of Cooper pairs
M. V. Burdastyha,b, S. V. Postolovaa,c, I. A. Derbezova, A. V. Gaislera, M. C. Diamantinid, C. A. Trugenbergere, V. M. Vinokurf, A. Yu. Mironova,b
aA. V. Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
bNovosibirsk State University, 630090 Novosibirsk, Russia
cInstitute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
dNoise in Physical Systems Laboratory, Istituto Nazionale di Fisica Nucleare and Dipartimento di Fisica e Geologia,
University of Perugia, I-06100 Perugia, Italy
eSwissScientific Technologies SA, CH-1204 Geneva, Switzerland
fMaterials Science Division, Argonne National Laboratory, Argonne, 60637 Illinois, USA
Abstract
We investigate the evolution of the electronic transport in
disordered NbTiN films at the insulating side of the superconductor-
insulator transition as function of the effective system size along the
current direction. We demonstrate that both, the threshold voltage
characterizing low -temperature superinsulating phase, and the
Berezinsky-Kosterlitz-Thouless criticality of the conductance above the
superinsulator critical temperature, vanish upon increasing disorder
taking the system far from the disorder-driven superconductor-insulator
transition (SIT). We find that decrease of the system's effective size
suppresses its insulating and superinsulating properties and that
threshold voltage drops linearly with the diminishing system size. We
demonstrate that this linear dependence can be used for experimental
measurement of the linear tension of the electric string binding Cooper
pairs and anti-Cooper pairs in a superinsulator.