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VOLUME 111 (2020) | ISSUE 5 | PAGE 301
Microstructural characterization of V-defects in InGaN/GaN multiquantum wells
DOI: 10.31857/S0370274X20050045
Abstract
InGaN multiple-quantum-well (MQW) structures grown by metal-organic chemical-vapor deposition (MOCVD) are found to contain V-defects attached to threading dislocations. The nature of the V-defects was evaluated using transmission electron microscopy (TEM), atomic force microscope (AFM), secondary ion mass spectroscopy (SIMS). Some (a+c) dislocations were shown to decompose inside the multi-quantum well, giving rise to a misfit segment in the c-plane and a V-defect. The V-defects in the multiple-quantum-well have the thin six-walled structure with InGaN/GaN \{10\bar{1}1\} layers. The mechanism of formation of these defects has been discussed in terms of stress induced by lattice mismatch and reduced In incorporation on the \{10\bar{1}1\} planes in comparison to the (0001) surface.