|
VOLUME 114 (2021) | ISSUE 6 |
PAGE 365
|
Facile fabrication of Cu2O thin film with high Seebeck coefficient
M. Zhang, F. Song, S. Liang
Chemistry Department, Renmin University of China, 100872 Beijing, China
Abstract
Thermoelectric materials can directly convert waste heat into electricity with all solid state
devices. Here we report thermoelectric properties of Cu2O thin film with high Seebeck
coefficient. The Cu2O thin film was fabricated by oxidizing copper wire directly on stove
at ambient environment. Within the temperature range of 300 to 500 K, we measured
Seebeck coefficient of Cu2O thin film as high as 4000 μV/K at 370 K, higher than the most
current reported Cu2O thin film ( 1000 μV/K). Using the estimated resistivity about
31 Ω•cm, power factor of the Cu2O thin film reached 52 μW/m • K2.
We conjecture the relatively high Seebeck coefficient relates very likely to the band bending between
Cu2O-Cu, Cu2O-SnO2. High Seebeck coefficient and ensuing improved power factor could find
applications in temperature/touch monitoring, transient thermoelectric cooling and space-constrained area.
|
|