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| VOLUME 115 (2022) | ISSUE 10 | PAGE 611 |
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Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity
E. I. Girshova+, G. Pozina*, A. V. Belonovskii+, M. I. Mitrofanov×°, I. V. Levitskii×°, G. V. Voznyuk+, V. P. Evtikhiev*, S. N. Rodin×°, M. A. Kaliteevski+
+ITMO University, 197101 St. Petersburg, Russia *Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden ×Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, 194021 St. Petersburg, Russia °Ioffe Institute, 194021 St. Petersburg, Russia
Abstract
We study and compare optical microcavities formed by GaN planar nanowires. Nanostructures with structural defects such as stacking faults and without defects are considered. The behavior of an exciton localized in a stacking fault is considered. Different behavior of the photoluminescence intensity and the photoluminescence decay time is observed for the cases under consideration. Theoretical calculations show the localization of the field at the ends of the structure. |