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VOLUME 55 (1992) | ISSUE 2 | PAGE 146
Percolation metal-insulator transition in 2D electron gas if Si mosfet under the ultra-quantum limit condition
The metal-insulator transition In 2D electron gas of Si MOSFET has been investigated. In strong magnetic Selds the phase boundary m Я,АГ,-р1апе has been found to be a straight line with slope vc = 0.53 ± 0.01, which is sure to indicate the percolation character of transition.