Fine structure of the red photoluminescence band of porous silicon
Averkiev N.S., Asnin V.M., Churilov А.В., Markov I.I., Mokrousov N.E., Silov A.Yu., Stepanov V.I.
A fine structure of the red photoluminescence band of porous silicon is reported. This is a direct evidence that the visible radiation originates in Si quantum wires wherein two-dimensional quantum confinement of carriers results in a widening of the Si band gap. To explain the line structure a model of electronic energy states in the Si wires is proposed.