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VOLUME 121 (2025) | ISSUE 9 | PAGE 768
Spin-valve effect for spin-polarized surface states in topological semimetals
DOI: 10.31857/S0370274X25050099
Abstract
We experimentally investigate magnetoresistance of a single GeTe-Ni junction between the α-GeTe topological semimetal and thick nickel film at room and liquid helium temperatures. For the magnetic field parallel to the junction plane, we demonstrate characteristic spin-valve hysteresis with mirrored differential resistance dV/dI peaks even at room temperature. In contrast, for normal magnetic fields spin-valve effect appears only at low temperatures. From the magnetic field anisotropy, observation of the similar effect for another topological semimetal Cd3As2, and strictly flat dV/dI(H) magnetoresistance curves for the reference GeTe-Au junction, we connect the observed spin-valve effect with the spin-dependent scattering between the spin textures in the topological surface states and the ferromagnetic nickel electrode. For the topological semimetal α-GeTe, room-temperature spin-valve effect allows efficient spin-to-charge conversion even at ambient conditions.