Hall insulator: experimental evidences
Dorozhkm S.I., Shashkin A.A., Kravchenko G.V., Dolgopolov V. T, Haug R.J., von Klitzing K., Ploog K. A.
We have experimentally investigated a metal-insulator transition in two-dimensional electron systems of GaAs/AlGaAs heterojunctions in the extreme quantum limit. It has been observed that the Hall resistance Rxy of an insulating phase is close to the classical value Rxy Н/пяес while the magnetoresistance Rxx tends to infinity with decreasing temperature. Such behavior supports recent ideas of the Hall insulating state.