Shifting the quantum Hall plateau level in a double layer electron system
E. V. Deviatov, A. A. Shashkin, V. T. Dolgopolov, H.-J. Kutschera+, A. Wixforth+, K. L. Campman*, A. C. Gossard*
Institute of Solid State Physics, 142432 Chernogolovka, Moscow distr. Russia
+Ludwig-Maximilians-Universität, D-80539 München, Germany
*Materials Department and Center for Quantized Electronic Structures, University of California, 93106, Santa Barbara, California USA
PACS: 72.20.My, 73.40.Kp
Abstract
We study the plateaux of the integer quantum Hall resistance in a
bilayer electron system in tilted magnetic fields. In a narrow range
of tilt angles and at certain magnetic fields, the plateau level
deviates appreciably from the quantized value with no dissipative
transport emerging. A qualitative account of the effect is given in
terms of decoupling of the edge states corresponding to different
electron layers/Landau levels.