Subgap anomaly and above-energy-gap structure in chains of diffusive SNS junctions
T. I. Baturina+, D. R. Islamov+*, Z. D. Kvon+
+Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
*Novosibirsk State University, 630090 Novosibirsk, Russia
PACS: 73.23.-b, 74.50.+r, 74.80.Fp
Abstract
We present the results of
low-temperature transport measurements on chains
of superconductor-normalconstriction-superconductor (SNS) junctions
fabricated on the basis of superconducting PtSi film.
A comparative study of the properties of the chains,
consisting of 3 and 20 SNS junctions in series,
and single SNS junctions reveals essential distinctions
in the behavior of the current-voltage characteristics of the systems:
(i) the gradual decrease of the effective suppression voltage
for the excess conductivity observed at zero bias as the quantity
of the SNS junctions increases,
(ii) a rich fine structure on the dependences
dV/dI-V at dc bias voltages higher than the superconducting gap and
corresponding to some multiples of 2Δ/e.
A model to explain this above-energy-gap
structure based on energy relaxation of electron
via Cooper-pair-breaking in superconducting island
connecting normal metal electrodes is proposed.