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VOLUME 76 (2002) | ISSUE 9 | PAGE 665
Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide
PACS: 73.23.Ps, 73.23.Hk
Abstract
Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)N, where N=0,1,2,3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.