Anisotropy of electronic wave functions in self-assembled InAs dots embedded in the centre of a GaAs quantum well studied by magnetotunneling spectroscopy
E. E. Vdovin, Yu. N. Khanin, A. V. Veretennikov*, A. Levin+, A. Patane+, Yu. V. Dubrovskii, L. Eaves+, P. C. Main+, M. Henini+, G. Hill
Institute of Microelectronics Technology RAS, 142432 Chernogolovka, Russia +School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK *Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia Dept. of Electronic and Electrical Engineering, University of Sheffield, UK
PACS: 71.24.+q, 73.40.Gk, 73.61.Ey, 73.61.Tm
Abstract
We present an experimental study of electron wavefunctions in
InAs/GaAs self-assembled quantum dots by magnetotunneling
spectroscopy. The electron wavefunctions have a biaxial symmetry in the
growth plane, with axes corresponding to the main crystallographic directions
in the growth plane. Moreover we observed the in-plane anisotropy of the
subbands of the quantum well.
|