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VOLUME 72 (2000) | ISSUE 9 | PAGE 684
Observation of the interaction between Landau levels of different two-dimensional subbands in GaAs in normal magnetic field
PACS: 71.45.Gm, 71.55.Eq, 73.20.Mf, 73.40.Gk
Tunnel current measurements between strongly disordered two-dimensional electron systems in a perpendicular magnetic field are presented. Two-dimensional electron accumulation layers are formed by extremely narrow layer of Si donors (Si delta doping) in GaAs on either sides of an AlGaAs tunnel barrier. Strong interaction between Landau levels of the two-dimensional subbands in each accumulation layers is observed as an anti-crossing of the related peak positions in the tunnel current vs. voltage curves as a function of magnetic field. The splitting of the interacting Landau levels is about 10 meV, which cannot be explained by non-parabolicity of the conduction band in GaAs. Possible reason for the observed interaction connected with the collective excitations in the 2DES is discussed.