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VOLUME 71 (2000) | ISSUE 5 | PAGE 298
Electrooptic modulation in the Stark-Ladder regime
PACS: 42.79.Hp, 71.70.-d, 78.20.Ja, 78.66.-w
A direct measurement of the in-plane birefringence below the absorption edge of a GaAs/AlAs superlattice (SL) under electric fields (E) shows a unique type of electrooptic modulation. The SL is sandwiched between two doped AlGaAs-alloy layers which play the simultaneous role of positive (p+) and negative (n~) contacts, as well as clad layers to achieve optical waveguiding. The p-(SL)-n structure is chosen so that, as a function of the externally applied bias, it displays Stark-Ladder Localization and the Quantum Confined Stark Effect at low and high fields, respectively. We show that this results in an electrooptic modulation in which the built-in birefringence of the SL initially decreases and shows a crossover to a quadratic increase for larger fields.